Evolution of stacking faults in substituted nickel hydroxide spherical powders

Stacking faults and partial dislocations in graphene

We investigate two mechanisms of crystallographic slip in graphene, corresponding to glide and shuffle generalized stacking faults (GSF), and compute their -curves using Sandia National Laboratories Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS). We find evidence of metastable partial dislocations for the glide GSF only. The computed values of the stable and unstable stackin...

Shockley-Frank stacking faults in 6H-SiC

Stacking Faults in Co-Alloy Longitudinal Media

Stacking faults in CoCrTa/Cr, CoCrPt/NiAl, and CoCrPt/Cr/NiAl films have been studied by electron diffraction. Interfacial lattice match and epitaxial growth play important roles in reducing the stacking fault density. It is found that the bicrystal media has large stacking fault densities. In the unicrystal media case, when good epitaxy between magnetic layer and underlayer cannot be achieved,...

On the energy of terminated stacking faults

The equilibrium of dissociated dislocations is discussed in terms of intrinsic material properties such as the ideal stacking fault energy (ideal SFE) and the stacking fault (SF) strain. The ideal SFE is de® ned as the energy per unit area of an in® nitely extendedSF in an ideal in® nite crystal. The e€ ective SFE is de® ned as the energy per unit area of a terminated SF. The terminated SF is a...

Proton Diffusion in Nickel Hydroxide Films

Electrochemical impedance spectroscopy (EIS) was used to measure the solid-state diffusion coefficient of protons in nickel hydroxide films at room temperature as a function of state of charge (SOC). A model for the complex faradaic impedance of the nickel hydroxide active material is presented and used to extract the diffusion coefficient of protons from the EIS data. Impedance data over a ran...